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Quantum nature of a strongly coupled single quantum dot-cavity system, Nature 445(7130): p. 896-9
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Self-tuned quantum dot gain in photonic crystal lasers, S. Strauf, K. Hennessy, M.T. Rakher, Y.-S. Choi, A. Badolato, L.C. Andreani, E.L. Hu, P.M. Petroff and D. Bouwmeester, Physical Review Letters 96 (12)p.127404/1-4 (2006)
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Tuning photonic nanocavities by atomic force microscope nano-oxidation, K. Hennessy, C.Högerle, E. Hu, A. Badolato, and A. Imamoglu, Appl. Phys. Lett. 89, 041118 (2006)
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Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes, Antonio Badolato, Kevin Hennessy, Mete Atatüre, Jan Dreiser, Evelyn Hu, Pierre M. Petroff, Atac Imamoglu, Science, 308, 1158-61 (2005)
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Tuning photonic crystal nanocavity modes by wet chemical digital etching, K. Hennessy, A. Badolato, Adele Tamboli, P.M. Petroff, and E. Hu , M. Atatüre, J. Dreiser, and A. Imamoglu, Appl. Phys. Lett.87(2), 21108-1-3 (2005)
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Square-lattice photonic crystal microcavities for coupling to single InAs quantum dots, K. Hennessy, C. Reese, A. Badolato, C.F. Wang, A. Imamoglu, P.M. Petroff, E.Hu, G. Jin, S. Shi, D.W. Prather, Appl. Phys. Lett.83 (18), 3650 - 2 (2003)
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Lasing from InGaAs Quantum Dots in Electron Injection Microdisk, Lidong Zhang and E.L. Hu,
Appl. Phys. Lett. 82(3), 319-321 (2003)
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Nonclassical radiation from a single self-assembled InAs quantum dot, C.Becher, A. Kiraz, P. Michler, A. Imamoglu, W.V.Schoenfeld, P.M.Petroff, Lidong Zhang; E. Hu Physical Review B 63 (12), 121312/1-4 (2001)
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Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters, C. Reese, C. Becher, A. Imamoglu, E. Hu, B.D. Gerardot, P.M. Petroff, Appl. Phys. Lett. 78(16), 2279-2281 (2001)
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Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure, A. Kiraz, P. Michler, C. Becher, B. Gayral, A. Imamoglu, Lidong Zhang; E. Hu, W.V. Schoenfeld, P.M. Petroff, Appl. Phys. Lett. 78 (25), 3932-4 (2001)
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Laser emission from quantum dots in microdisk structures, P. Michler, A. Kiraz, L. Zhang, C. Becher, E.Hu, A. Imamoglu, Appl. Phys. Lett., 77 (2), p.184-6 (2000)
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A quantum dot single-photon turnstile device, P. Michler, A. Kiraz, C. Becher, W.V. Schoenfeld, P.M. Petroff, L.D. Zhang, E.L. Hu, A. Imamoglu, Science 290, 2282-2285 (2000)
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Room-temperature continuous-wave lasing in GaN//InGaN microdisks, Adele C. Tamboli, Elaine D. Haberer, Rajat Sharma, Kwan H. Lee, Shuji Nakamura and Evelyn L. Hu Nature Photonics 1(1): p. 61-4 (2007)
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Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution, Aurélien David, Tetsuo Fujii, Rajat Sharma, Kelly McGroddy, Shuji Nakamura, Steven P. DenBaars, Evelyn L. Hu, Claude Weisbuch, and Henri Benisty, Appl Phys. Lett. 88, 061124 (2006)
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A vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using bandgap-selective photoelectrochemical etching, R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Appl. Phys. Lett. 87(5), 051107-1-3 (2005)
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GaN blue photonic crystal membrane nanocavities, Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and C. Meier, Appl. Phys. Lett. 88 (24), 243101 (2005)
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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening, T. Fujii, Y. Gao, R. Sharma, E.L. Hu, S.P. DenBaars, S. Nakamura, Appl. Phys. Lett.84 (6), 855-7 (2004)
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Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction, A. David, C. Meier, R. Sharma, F. Diana, S. DenBaars, E.Hu, S. Nakamura, C. Weisbuch, H. Benisty, Appl. Phys. Lett.87(10), 101107-1-3 (2004)
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Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical wet etching, E. D. Haberer, R. Sharma, C. Meier, A. Stonas, S. Nakamura, S. DenBaars, E.L. Hu, Appl. Phys. Lett.85(22), 5179-82 (2004)
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Broadband Notch Filters Based on Quasi-2D Photonic Crystal Waveguides for InP-based Monolithic Photonic Integrated Circuits, M. Davanço, A. Xing, J. Raring, E. L. Hu, D.J. Blumenthal, IEEE Journ. Sel. Topics in Quant. Electronics 12(6): p. 1164-74 (2006)
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Detailed characterization of slow and dispersive propagation near a mini-stop-band of an InP photonic crystal waveguide, M. Davanço, A. Xing, J. Raring, E. L. Hu, D.J. Blumenthal1, Optics Express 13 (13) p, 4931-4938 (2005)
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Transmission measurement of tapered single line defect photonic crystal waveguide, Aimin Xing, Marcelo Davanco, Daniel J. Blumenthal, Evelyn L. Hu, Phot. Technol. Lett. 17(10), 2092-4 (2005)
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Fabrication of InP based 2D photonic crystal membrane, A. Xing, M. Davanço, D.J. Blumenthal, E.L. Hu, Journ. Vac. Sci. Techno.B 22 (1), 70-73 (2004)
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InP Photonic Crystal Membrane Structures: fabrication accuracy and optical performance, A. Xing, Marcelo Davanço, D. Blumenthal and E.L. Hu, Appl. Phys. Lett.85 (4), 522 - 4 (2004)
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Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride, Y. Gao, M.D. Craven, S.P. DenBaars, E.L. Hu, Appl. Phys. Lett.84 (17), 3322 - 4 (2004)
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Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching, Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. DenBaars, S. Nakamura, E.L. Hu, Jap. Journ. Appl. Phys. Part 2-Letts & Exp.Letts. 43(5a):L637-L639 (2004)
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Removal of Thick (>100nm) InGaN Layers for optical devices using band-gap selective photoelectrochemical etching, E.D. Haberer, R. Sharma, A,R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Appl. Phys. Lett.85(5), 762-4 (2004)
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Photoelectrochemical Undercut Etching for Fabrication of GaN MEMS, A.R. Stonas, N.C. MacDonald, K.L. Turner, S.P. DenBaars, E.L. Hu Journ. Vac. Sci. Technol.B19 (6), 2838-41 (2001).
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Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications, A.R.Stonas, T. Margalith, S.P. DenBaars, L.A. Coldren, E.L. Hu, Appl. Phys. Lett., 78(13), 1945-1947 (2001)
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Room-temperature photoenhanced wet etching of GaN, M.S. Minsky, M. White, E.L. Hu, Appl. Phys. Lett. 68(11), 1531-1533 (1996)
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A wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor (HBT), Sarah Estrada, Andrew Huntington, Andreas Stonas, Huili Xing, Larry Coldren, Steven DenBaars, Umesh Mishra, Evelyn Hu, Appl. Phys. Lett.82 (5), 820-822 (2003)
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Microstructure of GaAs/GaN interfaces produced by direct wafer fusion, J. Jasinski, W. Swider, J. Washburn, Z. Liliental-Weber, S. Estrada, E.Hu, Appl. Phys. Lett. 81(17), 3152-3154 (2002)
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Interface of directly bonded GaAs and InP, N.Y. Jin-Phillipp, W. Sigle, A. Black, D. Babic, J.E. Bowers, E. Hu, and M. Rühle. Journ. Appl. Phys., 89 (2), 1017-24 (2001)
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Double-fused 1.5µm vertical cavity lasers with a record high To of 132K at room temperature, K.A. Black, P. Abraham, N.M. Margalit, E.R. Hegblom, Y.-J. Chiu, J. Piprek, J.E. Bowers, E.L. Hu, Electronics Lett. 34 (20), 1947-9 (1998)
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Wafer Fusion: Materials Issues and Device Results, A. Black, A.R. Hawkins, N.M. Margalit, D.I. Babic´, A.L. Holmes, Jr., Y.-L. Chang, P. Abraham, J.E. Bowers, E.L. Hu IEEE Journ. Selected Topics in Quantum Electronics 3(3), 943-951 (1997)
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Design and analysis of double-fused 1.55 µm vertical-cavity lasers, D.I. Babic´, J. Piprek, K. Streubel, R.P. Mirin, N.M. Margalit, D.E. Mars, J.E. Bowers, E.L. Hu, IEEE Journ. Quant. Electron.33 (8), 1369-83 (1997)
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Double-fused 1.52-µm Vertical-cavity Lasers, D.I. Babic´, J.J. Dudley, K. Steubel, R.P. Mirin, J.E. Bowers, and E.L. Hu, Appl. Phys. Lett. 66 (9), 1030-1032 (1995)
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Semiconducting and Superconducting Physics and Devices in the InAs/AlSb Materials System, H. Kroemer and E.L. Hu, in Nanotechnology, G. Timp, ed., Springer-Verlag, N.Y. 1998
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Nonequilibrium AC Josephson effect in mesoscopic Nb-InAs-Nb junction, K.W. Lehnert, N. Argaman, H.-R. Blank, K.C. Wong, S.J. Allen, E.L. Hu, H. Kroemer, Physical Review Letters, 82 (6), 1265-8 (1999)
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In situ preparation of the semiconductor-superconductor interface: Nb contacts on InAs quantum wells, G. Bellomi, W.J. Mitchell, E.L. Hu Journ. Vac. Sci. Technol.B17 (5), p. 2001-4 (1999)
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Anomalous Andreev Conductance in InAs-AlSb Quantum Well Structures with Nb Electrodes,
C. Nguyen, H. Kroemer, and E.L. Hu, Phys. Rev. Lett., 69 (19), 2847-2850 (1992)
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Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN, E.D. Haberer, C.H. Chen, M. Hansen, S. Keller, S.P. DenBaars, U.K. Mishra, E.L. Hu, Journ. Vacuum Science & Technology B 19 (3), 603-8 (2001)
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Optical Characterization of Plasma Etching Induced Damage Evelyn L. Hu and Ching-hui Chen, Defects in Optoelectronic Materials (Gordon Breach), Ed.Kazumi Wada and Stella W. Pang, Gordon and Breach (Amsterdam 2001)
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Defect Evolution in Compound Semiconductors, Evelyn L. Hu, The Encyclopedia of Materials: Science and Technology, Elsevier Science, p. 1420-5 (2001)
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Channeling as a mechanism for dry etch damage in GaN, Haberer, E.D.; Ching-Hui Chen, A. Abare, M. Hansen, S. Denbaars, L. Coldren, U. Mishra, E.L. Hu, Appl. Phys. Lett., 76 (26), 3941-3 (2000)
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Role of defect diffusion in the InP damage profile, D.G. Yu, C.-H. Chen, A.L. Holmes, Jr., S.P. DenBaars, E.L. Hu, Journ. Vac. Sci. Technol. B 15(6), 2672-2675 (1997)
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Radiation enhanced diffusion of low energy ion-induced damage, C.-H. Chen, D.L. Green, E.L. Hu, J.P. Ibbetson, P.M. Petroff, Appl. Phys. Lett. 69 (1), 58-60 (1996)
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Diffusion and Channeling of Low Energy Ion: the Mechanism of Ion Damage, C.-H. Chen, D.L. Green, and E.L. Hu, Journ. Vac. Sci. & Technol. B 13 (6), 2355-9 (1995)
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Investigation of RIE-Induced Damage in GaAs-AlGaAs Quantum Well Structures, H.F. Wong, D. Green, T.Y. Liu, M. Bellis, P.O. Holtz, E.L. Hu, P.M. Petroff, and J.L. Merz J. of Vac. Sci. and Tech., B6 (6), 1906 (1988)
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